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Applied Physics Letters

Volumn 56, Issue 15, 1990, Pages 1442-1444

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

(9) Powell, J A a Larkin, D J a Matus, L G a Choyke, W J b Bradshaw, J L b Henderson, L b Yoganathan, M b Yang, J c Pirouz, P c

a NASA GLENN RESEARCH CENTER (United States)

b UNIVERSITY OF PITTSBURGH (United States)

c CASE WESTERN RESERVE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001072754 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.102492 Document Type: Article

Times cited : (116)

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- Springer Proceedings in Physics, edited by G. L. Harris and C. Y.‐W. Yang (Springer, Berlin, Heidelberg)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.