Profile design issues and optimization of epitaxial Si and SiGe-base bipolar transistors and circuits for 77K applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1991, Pages 69-70

  Cressler, John D ^a   Comfort, James H ^a   Crabbe, Emmanuel F ^a   Patton, Gary L ^a   Stork, Johannes M C ^a   Sun, Jack Y C ^a   Meyerson, Bernard S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; DATA STORAGE, SEMICONDUCTOR--STORAGE UNITS; INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

EMITTER COUPLED LOGIC; NONTHRESHOLD LOGIC; PROFILE DESIGN; SILICON GERMANIUM BASE BIPOLAR TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0026405193     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)