Utilization of Thin As-Deposited Amorphous Silicon Gate/Emitter Layer in Advanced CMOS/BiCMOS Processes

IEEE Transactions on Electron Devices

Volumn 39, Issue 5, 1992, Pages 1262-1265

  El Diwany, M ^a   Brassington, M ^b  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^b SUN MICROSYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - AMORPHOUS; TRANSISTORS, BIPOLAR - PERFORMANCE;

BICMOS PROCESS; COBALT SILICIDE; SUBMICRON DEVICES; THIN POLYSILICON LAYER;

INTEGRATED CIRCUITS, CMOS;

EID: 0026869949     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.129123     Document Type: Article

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