Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1990, Pages 55-56

  Burghartz, Joachim N ^a   Sun, Jack Y C ^a   Mader, Siegfried R ^a   Stanis, Carol L ^a   Ginsberg, Barry J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUB-MICRON; DEVICE CHARACTERISTICS; DOPANT DISTRIBUTION; EMITTER DEPTHS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; EPITAXIAL BASE; IN-SITU DOPING; N-P-N TRANSISTORS; POLYSILICON EMITTER; POLYSILICON EMITTER BIPOLAR TRANSISTORS; SCALE DOWN; SCALING LIMITS;

ARSENIC; ENERGY DISPERSIVE SPECTROSCOPY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON--DOPING;

POLYSILICON; TRANSISTORS, BIPOLAR;

DIGEST OF PAPER; NPN TRANSISTORS; POLYSILICON EMITTERS; SUBMICRON BIPOLAR TRANSISTORS;

EID: 0025659616     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1990.111005     Document Type: Conference Paper

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