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Volumn 38, Issue 6, 1991, Pages 1500-1506

Guidelines for predicting single-event upsets in neutron environments

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; GRAPHIC METHODS; NEUTRONS; SEMICONDUCTING SILICON;

EID: 0026382710     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124138     Document Type: Article
Times cited : (59)

References (13)
  • 3
    • 0018716817 scopus 로고
    • Fffect of Cosmic Rays on Computer Memories
    • J.L. Ziegler and W.A. Lanford, “Fffect of Cosmic Rays on Computer Memories”, Science 206, 776–788 (1979)
    • (1979) Science , vol.206 , pp. 776-788
    • Ziegler, J.L.1    Lanford, W.A.2
  • 4
    • 84939336473 scopus 로고
    • Burst Generation Rates in Silicon and Gallium Arsenide from Neutron-Induced Nuclear Recoils
    • SCC Report 87-02, Severn Communications Corporation, Millersville, Maryland
    • J.R. Letaw, “Burst Generation Rates in Silicon and Gallium Arsenide from Neutron-Induced Nuclear Recoils”, SCC Report 87-02, Severn Communications Corporation, Millersville, Maryland (1987)
    • (1987)
    • Letaw, J.R.1
  • 5
    • 0024925828 scopus 로고
    • Incorporation of ENDF-V Neutron Cross Section Data for Calculating Neutron-Induced Single Event Upsets
    • E. Normand and W.R. Doherty, “Incorporation of ENDF-V Neutron Cross Section Data for Calculating Neutron-Induced Single Event Upsets”, IEEE Transactions on Nuclear Science NS-36, 2349–2355 (1989)
    • (1989) IEEE Transactions on Nuclear Science , vol.NS-36 , pp. 2349-2355
    • Normand, E.1    Doherty, W.R.2
  • 9
    • 84941867080 scopus 로고    scopus 로고
    • Determination of SEU Parameters of CMOS RAMs by Charge Collection Measurements on Working Devices
    • (this proceedings)
    • P.J. McNulty et al., “Determination of SEU Parameters of CMOS RAMs by Charge Collection Measurements on Working Devices,” IEEE Transactions on Nuclear Science NS-38 (this proceedings)
    • IEEE Transactions on Nuclear Science , vol.NS-38
    • McNulty, P.J.1
  • 10
    • 0024275221 scopus 로고
    • A Comparison of Neutron-Induced SEU Rates in Si and GaAs Devices
    • C.H. Tsao, R. Silberberg, and J.R. Letaw, “A Comparison of Neutron-Induced SEU Rates in Si and GaAs Devices”, IEEE Transactions on Nuclear Science NS-35, 1634–1637 (1988)
    • (1988) IEEE Transactions on Nuclear Science , vol.NS-35 , pp. 1634-1637
    • Tsao, C.H.1    Silberberg, R.2    Letaw, J.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.