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Journal of Applied Physics

Volumn 51, Issue 10, 1980, Pages 5458-5463

Rf annealing mechanisms in metal-oxide-semiconductor structures - An experimental simulation

(2) Ma, T P a Chin, M R a

a YALE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

EID: 0019074649 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.327503 Document Type: Article

Times cited : (28)

References (18)

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5
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6
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- Ma, T.P.¹ Chin, M.R.²

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10
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- (Wiley, New York)
- (1967) Techniques of Vacuum Ultraviolet Spectroscopy
- Samson, J.A.R.¹

11
- 0012951035
- edited by P. F. Kane and G. B. Larrabee (Plenum, New York)
- (1974) Characterization of Solid Surfaces

12
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- (McGraw-Hill, New York) Chap21
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13
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- edited by E. V. Condon and H. Odishaw(McGraw-Hill, New York) Chap8
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- See, for example
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- (unpublished)
- Ma, T.P.¹ Chin, M.R.²

17
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- Scoggan, G.A.¹ Ma, T.P.²

18
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- Simons, M.¹ Monteith, L.K.² Hanster, J.R.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.