Optimization of nitridation and re-oxidation conditions for an EEPROM tunneling dielectric

Conference on Solid State Devices and Materials

Volumn , Issue , 1990, Pages 171-174

  Ajika, N ^a   Ohi, M ^a   Sakamoto, O ^a   Arima, H ^a   Matsukawa, T ^a   Tsubouchi, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - PROM; SEMICONDUCTOR DEVICES;

NITRIDATION; RE-OXIDATION CONDITIONS; REOXIDIZED NITRIDED OXIDE (RONO); TUNNELING DIELECTRICS;

SILICA;

EID: 0025539119     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1990.c-2-4     Document Type: Conference Paper

References (0)