Effect of hydrogen on hot carrier immunity, radiation hardness and gate oxide reliability in MOS devices.

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1988, Pages 37-38

  Nissan Cohen, Y ^a   Woodbury, H H ^a   Gorczyca, T B ^a   Wei, C Y ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; HYDROGEN; OXIDES; SEMICONDUCTOR MATERIALS -- CHARGE CARRIERS;

ELECTRON TRAPPING; GATE OXIDE RELIABILITY; HYDROGEN ON HOT CARRIER IMMUNITY; RADIATION HARDNESS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024126940     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)