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Volumn 11, Issue 11, 1990, Pages 541-543

Device Sensitivity of Field-Plated Poly silicon High-Voltage TFT’s and Their Application to Low-Voltage Operation

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; MICROELECTRONICS; SEMICONDUCTING SILICON;

EID: 0025521006     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.63026     Document Type: Article
Times cited : (30)

References (8)
  • 1
  • 2
    • 33749777995 scopus 로고    scopus 로고
    • Page-wide high-voltage polysilicon TFT array for electronic printing
    • T. C. Chuang, I. W. Wu, T. Y. Huang, and A. Chiang, “Page-wide high-voltage polysilicon TFT array for electronic printing,” in SID 90 Dig., pp. 508–511.
    • SID 90 Dig. , pp. 508-511
    • Chuang, T.C.1    Wu, I.W.2    Huang, T.Y.3    Chiang, A.4
  • 3
    • 0024739568 scopus 로고
    • Development and electrical properties of undoped polycrystalline silicon thin film transistors
    • R. E. Proano, R. S. Misage, and D. G. Ast, “Development and electrical properties of undoped polycrystalline silicon thin film transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 1915–1922, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1915-1922
    • Proano, R.E.1    Misage, R.S.2    Ast, D.G.3
  • 4
    • 0013153867 scopus 로고    scopus 로고
    • NCAP displays; Optical switching and dielectric properties
    • L. Welsh, L. White, “NCAP displays; Optical switching and dielectric properties,” in SID 90 Dig., pp. 220–223.
    • SID 90 Dig. , pp. 220-223
    • Welsh, L.1    White, L.2
  • 5
    • 84941541302 scopus 로고    scopus 로고
    • Comparing technologies for thin-film electroluminescent devices
    • R. Mach et al., “Comparing technologies for thin-film electroluminescent devices,” in SID 90 Dig., pp. 238–241.
    • SID 90 Dig. , pp. 238-241
    • Mach, R.1
  • 6
    • 84941529226 scopus 로고
    • A new implant-through-contact (ITC) high-voltage thin film transistor
    • (Taiwan)
    • T. Y. Huang et al., “A new implant-through-contact (ITC) high-voltage thin film transistor,” in Proc. Int. Electron Devices and Mater. Symp. (Taiwan), 1988, pp. 285–289.
    • (1988) Proc. Int. Electron Devices and Mater. Symp. , pp. 285-289
    • Huang, T.Y.1
  • 8
    • 85068315021 scopus 로고    scopus 로고
    • Polysilicon thin film transistors with field-plate-induced junction for both high-voltage and low-voltage applications
    • presented at the 1990 IEEE SOS/SOI Technology Conf.
    • T. Y. Huang, I. W. Wu, A. G. Lewis, A. Chiang, and R. H. Bruce, “Polysilicon thin film transistors with field-plate-induced junction for both high-voltage and low-voltage applications,” presented at the 1990 IEEE SOS/SOI Technology Conf.
    • Huang, T.Y.1    Wu, I.W.2    Lewis, A.G.3    Chiang, A.4    Bruce, R.H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.