Polysilicon thin film transistors with field-plate-lnduced drain junction for both high-voltage & low-voltage applications

1990 IEEE SOS/SOI Technology Conference, Proceedings

Volumn , Issue , 1990, Pages 177-178

  Huang, T Y ^a   Wu, I W ^a   Lewis, A G ^a   Chiang, A ^a   Bruce, R H ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIQUID CRYSTAL DISPLAYS; PLATE METAL; PLATES (STRUCTURAL COMPONENTS); POLYCRYSTALLINE MATERIALS; POLYSILICON; SYSTEMS ENGINEERING; THIN FILM TRANSISTORS; THIN FILMS;

DEVICE CHARACTERISTICS; DEVICE FABRICATIONS; LARGE AREA DEVICES; LIGHTLY-DOPED DRAINS; LOW-VOLTAGE APPLICATIONS; OFF-STATE LEAKAGE CURRENT; POLYSILICON THIN FILM TRANSISTORS; THIN-FILM TRANSISTOR (TFTS);

THIN FILM CIRCUITS;

EID: 85068315021     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOSSOI.1990.145770     Document Type: Conference Paper

References (4)

1. M. Hack et al., IEDM, pp. 252, 1988.
2. T. Y. Huang et al., IEEE Electron Device Letters, V. EDL-12, June, 1990.
3. T. Y. Huang et al., Proc. SOS/SOI Technology Workshop, pp. 38, 1988.
4. J. G. Fossum et al., IEEE Trans. Elec. Dev. ED-32., pp. 1878, 1985.