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A new double heterostructure optoelectronic switch using molecular beam epitaxy
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Optoelectronic transient response of the self-aligned double heterostructure optoelectronic switch
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GaAs/AlGaAs inversion channel devices for an integrated optoelectronic technology
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Vertical to surface transmission electrophotonic device with selectable light output channels
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Low threshold GRINSCH GaAs/AlGaAs laser structures grown by OMVPE
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High efficiency broad area single quantum well laser with narrow single lobed farfield patterns prepared by MBE
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Operating characteristics of single quantum well AlGaAs/GaAs high powered lasers
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Double heterostructure optoelectronic switch as a single quantum well laser
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The bipolar field effect transistor ‘BICFET’: A new field effect solid-state device
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Spectral and dynamic characteristics of buried heterostructure, single quantum well ‘AlGa’As lasers
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