Very low threshold GRIN-SCH GaAs/GaAIAs laser structure grown by OM-VPE

Electronics Letters

Volumn 18, Issue 20, 1982, Pages 870-871

  Hersee, S D ^a   Baldy, M ^a   Assenat, P ^a   De Cremoux, B ^a   Duchemin, J P ^a  

^a THALES   (France)

Author keywords

Epitaxy; Semiconductor devices and materials; Semiconductor lasers

Indexed keywords

LASERS, SEMICONDUCTOR;

EID: 0020185836     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19820590     Document Type: Article

References (7)

1. HERSEE, S. D., BALDY, M., ASSENAT, P., DE CREMOUX, B., and DUCHEMIN, J. P.: ‘Low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OMVPE’, Electron. Lett., 1982, 18, pp. 618-620
2. TSANG, W. T.: ‘A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam’, Appl. Phys. Lett., 1981, 39, pp. 134-137
3. TSANG, W. T.: ‘Extremely low threshold (AlGa)As graded-index waveguide separate confinement heterostructure lasers grown by molecular beam epitaxy’, Appl. Phys. Lett., 1982, 40, pp. 217-219
4. KRESSEL, H., and BUTTER, J. K.: ‘Semiconductor lasers and heterojunctions LEDs’ (Academic Press, New York, 1977), p. 270
5. HERSEE, S. D., DI FORTE-POISSON, M. A., BALDY, M., and DUCHEMIN, J. P.: ‘A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MO CVD’, J. Crystal Growth, 1981, 55, pp. 53-57
6. HERSEE, S. D., BALDY, M., and DUCHEMIN, J. P.: ‘The variation of the p-n junction position in GaAs/GaAlAs double heterostructures grown by low pressure MO VPE’. Paper presented at Electronic Materials Conference, Colorado, USA, June 1982; to be published in J. Electron. Mat
7. DINGLE, R.: ‘Confined carrier quantum states in ultrathin semiconductorheterostructures’ in ‘Festkörperprobleme XV/Advances in Solid State Physics’ (Pergamon-Vieweg, Stuttgart, 1975), p. 21