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Volumn 26, Issue 13, 1990, Pages 949-951

275GHz 3-Mask Integrated GaAs Sampling Circuit

Author keywords

Gallium arsenide; Microwave measurement; Semiconductor devices and materials

Indexed keywords

ELECTRONIC CIRCUITS--MILLIMETER WAVES; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0025449356     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19900619     Document Type: Article
Times cited : (23)

References (8)
  • 4
    • 0037599749 scopus 로고
    • A DC to 12-4 GHz feedthrough sampler for oscilloscopes and other RF systems
    • Oct.
    • Grove, W. M.: ‘A DC to 12-4 GHz feedthrough sampler for oscilloscopes and other RF systems’, Hewlett-Packard J., Oct. 1966
    • (1966) Hewlett-Packard J.
    • Grove, W.M.1
  • 5
    • 0007890354 scopus 로고
    • Hyperabruptdoped GaAs nonlinear transmission line for picosecond shock-wave generation
    • Madden, C. J., Marsland, R. A., Rodwell, M. J., And Bloom, D. M.: ‘Hyperabruptdoped GaAs nonlinear transmission line for picosecond shock-wave generation’, Appl. Phys. Lett., 1989, 54, (11)
    • (1989) Appl. Phys. Lett. , vol.54 , Issue.11
    • Madden, C.J.1    Marsland, R.A.2    Rodwell, M.J.3    Bloom, D.M.4
  • 8
    • 84939766018 scopus 로고
    • 120 GHZ active wafer probes for picosecond device measurement
    • Mar. Salt Lake City, UT, USA
    • Majjdi-Ahy, R., And Bloom, D. M.: ‘120 GHZ active wafer probes for picosecond device measurement’. Proc. Picosecond Electronics and Optoelectronics, Mar. 1989, Salt Lake City, UT, USA
    • (1989) Proc. Picosecond Electronics and Optoelectronics
    • Majjdi-Ahy, R.1    Bloom, D.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.