DC and RF performance of 0.1 μm gate length Al.48In.52As-Ga.38In.62As pseudomorphic HEMT's

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 180-183

  Mishra, U K ^a   Brown, A S ^a   Rosenbaum, S E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH-ELECTRON-MOBILITY TRANSISTORS; MODULATION-DOPED EPITAXIAL LAYERS; PSEUDOMORPHIC HEMT; V-BAND NOISE FIGURE;

TRANSISTORS, FIELD EFFECT;

EID: 0024175123     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)