Metallurgical topics in silicon device interconnections: Thin film stresses

International Materials Reviews

Volumn 34, Issue 1, 1989, Pages 53-69

  D'Heurle F M ^a,b  

^a IBM RESEARCH   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

MATERIALS TESTING--CREEP; RELAXATION PROCESSES; SEMICONDUCTOR DEVICES; STRESSES--MEASUREMENTS;

INSULATED GATE FIELD EFFECT TRANSISTORS; SILICON DEVICES;

SEMICONDUCTING SILICON;

EID: 0024924679     PISSN: 09506608     EISSN: 17432804     Source Type: Journal    
DOI: 10.1179/imr.1989.34.1.53     Document Type: Review

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