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Volumn 53, Issue 3, 1988, Pages 219-221

Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor

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Indexed keywords


EID: 0343227873     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.100136     Document Type: Article
Times cited : (43)

References (14)
  • 8
    • 84950921014 scopus 로고    scopus 로고
    • It appears to us that the nomenclature “emitter, collector and gate” is best suited for a transistor of this kind. Like all potential-effect transistors, this one has an emitter, a collector, and a controlled injection process, but the control is effected by an insulated gate through which no dc current is flowing.
  • 13
    • 84950927303 scopus 로고    scopus 로고
    • It should be noted that while the exposed portion of the channel is depleted, the portion under the emitter is not. This follows unambiguously from our identification of the current peaks with resonant tunneling. At the bias conditions corresponding to the resonances in the range [formula omitted] the field drop associated with charge in the quantum well is always [formula omitted] corresponding to [formula omitted].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.