Transport and Noise in GaAs/AlGaAs Heterojunction Bipolar Transistors—Part I: Transport and High Current Gain

IEEE Transactions on Electron Devices

Volumn 36, Issue 6, 1989, Pages 1015-1019

  Houston, Peter A ^b   Margittai, Agnes ^a  

^a NORTEL NETWORKS   (Canada)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS--NOISE, SPURIOUS SIGNAL;

ALUMINUM GALLIUM ARSENIDE; BAND BENDING; BASE RESISTANCE; GAIN CREEP; GAIN SATURATION;

TRANSISTORS, BIPOLAR;

EID: 0024683834     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.24342     Document Type: Article

References (13)

1. W. P. Dumke, J. M. Woodall, and V. L. Rideout, Solid-State Electron., vol. 15, pp. 1339–1343, 1972.
2. H. Kroemer, Proc. IEEE, vol. 70, pp. 13–25, 1982.
3. H. H. Lin and S. C. Lee, Appl. Phys. Lett., vol. 47, p. 839, 1985.
4. H. Kanbe, J. C. Vicak, and J. C. Fonstad, IEEE Electron Device Lett., vol. EDL-5, pp. 172–175, 1984.
5. C. M. Maziar and M. S. Lundstrom, IEEE Electron Device Lett., vol. ED-8, pp. 90–92, 1987.
6. D. Ankri, R. Azoulay, E. Caquot, J. Dangla, C. Dubon, and J. F. Palmier, Solid-State Electron., vol. 29, pp. 141–149, 1985.
7. K. Taira, C. Takano, H. Kawai, and M. Arai, Appl. Phys. Lett., vol. 49, pp. 1278–1280, 1986.
8. N. Chand and H. Morkoç, IEEE Trans. Electron Devices, vol. ED-32, 1064–1069, 1985.
9. H. C. Casey, Jr., and M. B. Panish, Heterostructure Lasers, Part A. New York: Academic, 1978, ch. 4.
10. A. A. Rezazadeh, D. V. Morgan, P. A. Mawby, and T. M. Kerr, IEEE Trans. Electron Devices, vol. ED-34, pp. 947–949, 1987.
11. W. T. Moore, C. J. Miner, D. J. Day, P. Mandeville, and A. J. SpringThorpe, Can. J. Phys., Proc. 4th Canadian Semiconductor Conf. (Ottawa), 1988.
12. S. C. Lee and H. H. Lin, J. Appl. Phys., vol. 59, pp. 1688–1695, 1986.
13. S. C. Jue, D. J. Day, A. Margittai, and M. N. Svilans, “Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors—Part II: Noise and gain at low frequencies,” IEEE Trans. Electron Devices, this issue, pp. 1020–1025.