2-W KU-BAND MONOLITHIC GaAs FET AMPLIFIER.

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1985, Pages 27-30

  Macksey, H M ^a   Tserng, H Q ^a   Shih, H D ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC - MICROWAVES; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT - DESIGN;

2-W KU-BAND MONOLITHIC FET AMPLIFIER; CIRCUIT TOPOLOGY; SOURCE OVERLAY FET GEOMETRY; THREE-STAGE POWER AMPLIFIER;

AMPLIFIERS, POWER TYPE;

EID: 0022237533     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)