Transient Simulation of Silicon Devices and Circuits

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 4, Issue 4, 1985, Pages 436-451

  Bank, Randolph E ^a   Coughran, William M ^b   Fichtner, Wolfgang ^b   Grosse, Eric H ^b   Rose, Donald J ^b   Smith, R Kent ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES - CONVERGENCE OF NUMERICAL METHODS;

CMOS INTEGRATED CIRCUITS; CMOS LATCHUP PROBLEM; NEWTON'S METHOD; PARTIAL DIFFERENTIAL EQUATIONS;

INTEGRATED CIRCUITS, VLSI;

EID: 0021508244     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/TCAD.1985.1270142     Document Type: Article

References (49)

1. W. Fichtner, E. N. Fuls, R. L. Johnston, R. K. Watts, and W. W. Weick, “Optimized MOSFETs for subquartermicron channel lengths,” in IEDM Tech. Dig., pp. 384–387, 1983.
2. W. Fichtner, “Physics and simulation of small MOS devices,” in IEDM Tech. Dig., pp. 638–641, 1982.
3. H. L. Grubin, D. K. Ferry, G. J. Iafrate, and J. R. Barker, “The numerical physics of micron-length and submicron-length semicon¬ ductor devices,” VLSI Electronics — Microstructure Science 3, pp. 197–300, 1982.
4. K. Yokoyama, M. Tomizawa, A. Yoshii, and T. Sudoh, “Semiconductor device simulation at NTT,” this issue, pp. 452–461.
5. K. Blotekjaer, “Transport equations for electrons in two-valley semiconductors,” IEEE Trans. Electron Devices, vol. ED-17, pp. 38–47, 1970.
6. J. R. Barker and D. K. Ferry, “On the physics and modeling of small semiconductor devices 1,” Solid-State Electron., vol. 23, pp. 519–530, 1980.
7. W. Shockley, Electrons and Holes in Semiconductors. Princeton, NJ: van Nostrand, 1950.
8. R. P. Mertens, R. J. Van Overstraeten, and H. J. De Man, “Heavy doping effects in silicon,” Adv. Electron. Elec. Phys., vol. 55, pp. 77–118, 1981.
9. R. A. Smith, Semiconductors. Cambridge, UK: Cambridge Univ. Press, 1978.
10. A. De Mari, “An accurate numerical one-dimensional solution of the pn-junction under arbitrary transient conditions,” Solid-State Electron., vol. 11, pp. 1021–1053, 1968.
11. R. E. Bank, D. J. Rose, and W. Fichtner, “Numerical methods for semiconductor device simulation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1031–1041, 1983.
12. R. E. Bank, W. M. Coughran, Jr., W. Fichtner, D. J. Rose, and R. K. Smith, “Computational aspects of transient device simulation,” in Process and Device Simulation, W. L. Engl, Ed. New York: North-Holland, Holland, to be published.
13. L. R. Petzold, “Differential/algebraic equations are not ODE’s,” SIAM J. Scientific Statistical Computing, vol. 3, pp. 367–384, 1982.
14. W. C. Rheinboldt, “Differential-algebraic systems as differential-equations equations on manifolds,” Univ. of Pittsburgh Inst. for Computational Mathematics and Applications Rep. ICMA-83-55, 1983.
15. C. W. Gear and L. R. Petzold, “ODE methods for the solution of differential/algebraic Systems,” SIAM J. Numer. Anal., vol. 21, pp. 716–728, 1984.
16. L. O. Chua and P.-M. Lin, Computer-Aided Analysis of Electronic Circuits: Algorithms and Computational Techniques. Englewood Cliffs, NJ: Prentice-Hall, 1975.
17. G. D. Hachtel, R. K. Brayton, and F. G. Gustavson, “The sparse tableau approach to network analysis and design,” IEEE Trans. Circuit Theory, vol. CT-18, pp. 101–113, 1971.
18. W. M. Coughran, Jr., E. H. Grosse, and D. J. Rose, “CAzM: A circuit analyzer with macromodeling,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1207–1213, 1983.
19. S. Sastry, C. Desoer, and P. Varaiya, “Jump behavior of circuits and systems,” in Proc. IEEE Int. Symp. on Circuits and Systems, pp. 451–454, 454, 1981.
20. G. D. Hachtel and A. L. Sangiovanni-Vincentelli, “A survey of third-generation generation simulation techniques,” Proc. IEEE, vol. 69, pp. 1264–1280, 1280, 1981.
21. W. Fichtner, D. J. Rose, and R. E. Bank, “Semiconductor device simulation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1018–1030, 1983.
22. J. Lambert, Computational Methods in Ordinary Differential Equations. London: Wiley, 1973.
23. L. R. Petzold, “A description of DASSL: A Differential/Algebraic System Solver,” in Scientific Computing. New York: North-Holland, 1983, pp. 65-68; also presented at the 10th IMACS World Congress on Systems Simulation and Scientific Computation, Montreal, Canada, Aug. 8–13, 1982.
24. C. W. Gear, “The simultaneous numerical solution of differential-al-gebraic systems,” IEEE Trans. Circuit Theory, vol. CT-18, pp. 89–95, 95, 1971.
25. ——, “Efficient stepsize control for output and discontinuities,” Univ. of Illinois Computer Science Dep. Rep. UIUCDCS-R-82-1111, 1982.
26. R. E. Bank and D. J. Rose, “Global approximate Newton methods,” Numer. Math., vol. 37, pp. 279–295, 1981.
27. W. M. Coughran, Jr., E. H. Grosse, and D. J. Rose, “Variation diminishing splines in simulation,” SIAM J. Scientific and Statistical Computing, to be published.
28. R. E. Bank, “PLTMG user’s guide-Edition IV,” Univ. of California, San Diego, Mathematics Dep. Rep., 1985.
29. S. C. Eisenstat, M. H. Schultz, and A. H. Sherman, “Considerations in the design of software for sparse gaussian elmination,” in Sparse Matrix Computations, J. R. Bunch and D. J. Rose, Eds. New York: Academic, 1976, pp. 263–274.
30. S. C. Eisenstat, M. C. Gursky, M. H. Schultz, and A. H. Sherman, “Yale sparse matrix package I: The symmetric codes,” Int. J. Numer. Methods in Eng., vol. 18, pp. 1145–1151, 1982.
31. ——, “Yale sparse matrix package II: The nonsymmetric codes,” Yale Univ. Computer Science Dep. Research Rep. 114, 1977.
32. R. S. Varga, Matrix Iterative Analysis. Englewood Cliffs, NJ: Prentice-Hall, 1962.
33. A. George and J. W.-H. Liu, Computer Solutions of Large Sparse Positive Definite Systems. Englewood Cliffs, NJ: Prentice-Hall, 1981.
34. G. W. Stewart, Introduction to Matrix Computations. New York: Academic, 1973.
35. L. A. Hageman and D. M. Young, Applied Iterative Methods. New York: Academic, 1981.
36. W. P. Petersen, “Basic linear algebra subprograms for CFT usage,” Cray Res. Tech. Note 2240208, 1979.
37. H. C. Ellman, “Iterative methods for large, sparse, nonsymmetric systems of linear equations,” Yale Univ. Computer Science Dep. Res. Rep. 229, 1982.
38. T. J. O’Reilly, “The transient response of insulated-gate field-effect transistors,” Solid-State Electron., vol. 8, pp. 947–956, 1965.
39. J. R. Burns, “High-frequency characteristics of the insulated-gate field-effect transistor,” RCA Rev., 28, pp. 385–418, 1967.
40. ——, “Large-signal transit-time effects in the MOS transistor,” RCA Rev., vol. 30, pp. 15–35, 1969.
41. K. Goser, “Channel formation in an insulated-gate field-effect transistor (IGFET) and its equivalent circuit,” Siemens Res. Dev., vol. 1, pp. 3–9, 1971.
42. M. E. Zahn, “Calculation of the turn-on behavior of MOST,” Solid State Electron., vol. 17, pp. 843–854, 1974.
43. S. Laux, “Techniques for small-signal analysis of semiconductor diodes,” this issue, pp. 472–481.
44. E. H. Grosse, “Automatic choice of colors for level plots,” AT&T Bell Labs. Numerical Analysis Manuscript 85–1, 1985.
45. R. K. Brayton, F. G. Gustavson, and G. D. Hachtel, “A new efficient algorithm for solving differential-algebraic systems using implicit backward differentiation formulas,” Proc. IEEE, vol. 60, pp. 98–108, 1972.
46. P. Tischer and R. Sacks-Davis, “A new class of cyclic multistep formulae for stiff systems,” SIAM J. Scientific and Statistical Computing, vol. 4, pp. 733–747, 1983.
47. J. M. Tendler, T. A. Bickart, and Z. Picel, “A stiffly stable integration process using cyclic composite methods.” ACM Trans. Math. Software, vol. 4, pp. 339–368, 1978.
48. W. T. Weeks, A. J. Jimenez, G. W. Mahoney, D. Mehta, H. Qassemzadeh, and T. R. Scott, “Algorithms for ASTAP—A network-analysis analysis program,” IEEE Trans. Circuit theory, vol. CT-20, pp. 628–634, 634, 1973.
49. L. W. Nagel, “SPICE2: A computer program to simulate semiconductor circuits,” Univ. California, Berkeley, Electronics Res. Lab. Memo ERL-M520, 1975.