A General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 4, Issue 4, 1985, Pages 520-526

  Laux, Steven E ^a   Grossman, Bertrand M ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; SEMICONDUCTOR DEVICES, MOSFET - CHARGE CARRIERS;

AVALANCHE BREAKDOWN; IMPACT IONIZATION; SEMICONDUCTOR TRANSPORT;

SEMICONDUCTOR DEVICES;

EID: 0021508104     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/TCAD.1985.1270151     Document Type: Article

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