MATERIAL AND DEVICE CONSIDERATIONS FOR SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1982, Pages 578-581

  DiLorenzo, J V ^a   Dingle, R ^a   Feuer, M ^a   Gosard, A C ^a   Hendel, R ^a   Hwang, J C M ^a   Kastalsky, A ^a   Keramkida, V G ^a   Kiehl, R A ^a   O'Connor, P ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISCRETE DEVICE FABRICATION; ELECTRON MOBILITIES; MATERIAL GROWTH; PROPAGATION DELAY; RING OSCILLATOR FABRICATION; SELECTIVITY DOPED HETEROJUNCTIONS TRANSISTORS;

TRANSISTORS;

EID: 0020294326     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1982.190358     Document Type: Conference Paper

References (0)