LOW TEMPERATURE LPVD DEPOSITION OF TANTALUM SILICIDE.

Proceedings - The Electrochemical Society

Volumn 82-7, Issue , 1982, Pages 258-264

  Lehrer, William I ^a   Pierce, John M ^a   Goo, Edward ^a   Justi, Stefan ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTOR MATERIAL FOR VLSI INTERCONNECTS; DEPOSITION METHOD; ELECTRICAL RESISTIVITY; FILM CHARACTERIZATION; LPCVD METHOD FOR PREPARING TANTALUM SILICIDES AT TEMPERATURES 600-650 C;

INTEGRATED CIRCUITS, VLSI;

EID: 0020253151     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)