메뉴 건너뛰기




Volumn 27, Issue 2, 1980, Pages 387-394

Insulated-Gate Planar Thyristors: II—Quantitative Modeling

Author keywords

[No Author keywords available]

Indexed keywords

THYRISTORS;

EID: 0018986006     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.19872     Document Type: Article
Times cited : (10)

References (29)
  • 1
    • 84941530959 scopus 로고
    • An MOS-controlled triac device
    • Int. Solid-State Circuits Conf. (San Francisco, CA)
    • B. W. Scharf and J. D. Plummer, “An MOS-controlled triac device,” in Dig. Tech. Papers, Int. Solid-State Circuits Conf. (San Francisco, CA, 1978), pp. 222–223.
    • (1978) Dig. Tech. Papers , pp. 222-223
    • Scharf, B.W.1    Plummer, J.D.2
  • 2
    • 84937994823 scopus 로고    scopus 로고
    • Insulated-gate planar thyristors: I-Structure and basic operation
    • this issue
    • J. D. Plummer and B. W. Scharf, “Insulated-gate planar thyristors: I-Structure and basic operation,” this issue, pp. 380–387.
    • Plummer, J.D.1    Scharf, B.W.2
  • 3
    • 0017012955 scopus 로고
    • Mini-MSINC—A minicomputer simulator for MOS circuits with modular build-in model
    • Oct.
    • T. K. Young and R. W. Dutton, “Mini-MSINC—A minicomputer simulator for MOS circuits with modular build-in model,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 730–732, Oct. 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.SC-11 , pp. 730-732
    • Young, T.K.1    Dutton, R.W.2
  • 4
    • 84938010784 scopus 로고
    • Device modeling for statistical circuit simulation
    • Ph.D. dissertation, Stanford Electronics Laboratories, Stanford University, Stanford, CA, Tech. Rep. 5021–3, ch. 1
    • D. A. Divekar, “Device modeling for statistical circuit simulation,” Ph.D. dissertation, Stanford Electronics Laboratories, Stanford University, Stanford, CA, Tech. Rep. 5021–3, 1978, ch. 1.
    • (1978)
    • Divekar, D.A.1
  • 5
    • 0017007713 scopus 로고
    • A computer-aided design model for high voltage double diffused MOS (DMOS) transistors
    • Oct.
    • M. D. Pocha and R. W. Dutton, “A computer-aided design model for high voltage double diffused MOS (DMOS) transistors,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 718–726, Oct. 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.SC-11 , pp. 718-726
    • Pocha, M.D.1    Dutton, R.W.2
  • 7
    • 0018003664 scopus 로고
    • Modeling and measurement of surface impurity profiles of laterally diffused regions
    • Aug.
    • H. G. Lee, J. D. Sansbury, R. W. Dutton, and J. L. Moll, “Modeling and measurement of surface impurity profiles of laterally diffused regions,” IEEE J. Solid-State Circuits, vol. SC-13, pp. 455–461, Aug. 1978.
    • (1978) IEEE J. Solid-State Circuits , vol.SC-13 , pp. 455-461
    • Lee, H.G.1    Sansbury, J.D.2    Dutton, R.W.3    Moll, J.L.4
  • 8
    • 0039690708 scopus 로고
    • On the effect of mobility variation on MOS device characteristics
    • Feb.
    • D. Frohman-Benchkowsky, “On the effect of mobility variation on MOS device characteristics,” Proc. IEEE (Lett.), vol. 56, pp. 217–218, Feb. 1968.
    • (1968) Proc. IEEE (Lett.) , vol.56 , pp. 217-218
    • Frohman-Benchkowsky, D.1
  • 9
    • 33646923218 scopus 로고
    • Carrier mobility and current saturation in the MOS transistor
    • Mar.
    • S. R. Hofstein and G. Warfield, “Carrier mobility and current saturation in the MOS transistor,” IEEE Trans. Electron Devices, vol. ED-12, p. 129, Mar. 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-12 , pp. 129
    • Hofstein, S.R.1    Warfield, G.2
  • 10
    • 0017526223 scopus 로고
    • Effects of the diffused impurity profile on the dc characteristics of VMOS and DMOS devices
    • D.C. D'Avanzo, S. R. Combs, and R. W. Dutton, “Effects of the diffused impurity profile on the dc characteristics of VMOS and DMOS devices,” IEEE J. Solid-State Circuits, vol. SC-12, pp. 356–362, Aug. 1977.
    • (1977) IEEE J. Solid-State Circuits , vol.SC-12 , pp. 356-362
    • D'Avanzo, D.C.1    Combs, S.R.2    Dutton, R.W.3
  • 11
    • 84938007021 scopus 로고    scopus 로고
    • An insulated-gate thyristor structure, principles of operation and design
    • Ph.D. dissertation, Stanford Electronics Laboratories, Stanford University, Stanford, CA, to be published
    • B. W. Scharf, “An insulated-gate thyristor structure, principles of operation and design,” Ph.D. dissertation, Stanford Electronics Laboratories, Stanford University, Stanford, CA, to be published.
    • Scharf, B.W.1
  • 12
    • 84918189160 scopus 로고
    • Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
    • May
    • D. Leistiko, A. S. Grove, and C. T. Sah, “Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces,” IEEE Trans. Electron Devices, vol. ED-12, pp. 248–254, May 1965.
    • (1965) IEEE Trans. Electron Devices , vol.ED-12 , pp. 248-254
    • Leistiko, D.1    Grove, A.S.2    Sah, C.T.3
  • 13
    • 0014749359 scopus 로고    scopus 로고
    • Hot electron effects and saturation velocities in silicon inversion layers
    • vol. 41
    • F. F. Fang and A. B. Fowler, “Hot electron effects and saturation velocities in silicon inversion layers,” J. Appl. Phys., vol. 41, pp. 1825–1831, vol. 41.
    • J. Appl. Phys. , vol.41 , pp. 1825-1831
    • Fang, F.F.1    Fowler, A.B.2
  • 14
    • 84917975891 scopus 로고
    • Conductance of MOS transistors in saturation
    • Jan.
    • D. Frohman-Benchkowsky and A. S. Grove, “Conductance of MOS transistors in saturation,” IEEE Trans. Electron Devices, vol. ED-16, pp. 108–113, Jan. 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 108-113
    • Frohman-Benchkowsky, D.1    Grove, A.S.2
  • 15
    • 0014780722 scopus 로고
    • An integral charge control model of bipolar transistors
    • May/June
    • H. K. Gummel and H. C. Poon, “An integral charge control model of bipolar transistors,” Bell Syst. Tech. J., vol. 49, pp. 827–852, May/June 1970.
    • (1970) Bell Syst. Tech. J. , vol.49 , pp. 827-852
    • Gummel, H.K.1    Poon, H.C.2
  • 16
    • 0003915801 scopus 로고
    • SPICE 2: A computer program to simulate semiconductor circuits
    • Electronics Research Laboratory, University of California, Berkeley, CA, Memo ERL-M520
    • L. W. Nagel, “SPICE 2: A computer program to simulate semiconductor circuits,” Electronics Research Laboratory, University of California, Berkeley, CA, Memo ERL-M520, pp. A2.11–A2.32, 1975.
    • (1975) , pp. A2.11-A2.32
    • Nagel, L.W.1
  • 17
    • 0037691091 scopus 로고
    • An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layer process
    • Washington, DC, Dec.
    • D. B. Estreich, A. Ochoa, Jr., and R. W. Dutton, “An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layer process,” in IEDM Tech. Dig. (Washington, DC, Dec. 1978), pp. 230–234.
    • (1978) IEDM Tech. Dig. , pp. 230-234
    • Estreich, D.B.1    Ochoa, A.2    Dutton, R.W.3
  • 18
    • 30244572023 scopus 로고
    • Forward characteristics of thyristors in the fired state
    • A. Herlet and K. Raithel, “Forward characteristics of thyristors in the fired state,” Solid-State Electron., vol. 9, pp. 1089–1105, 1966.
    • (1966) Solid-State Electron. , vol.9 , pp. 1089-1105
    • Herlet, A.1    Raithel, K.2
  • 19
    • 84937654742 scopus 로고
    • Power rectifiers and transistors
    • Nov.
    • R. N. Hall, “Power rectifiers and transistors,” Proc. IRE, vol. 40, pp. 1512–1518, Nov. 1952.
    • (1952) Proc. IRE , vol.40 , pp. 1512-1518
    • Hall, R.N.1
  • 20
    • 84937741972 scopus 로고
    • The high current limit for semiconductor junction devices
    • June
    • N. H. Fletcher, “The high current limit for semiconductor junction devices,” Proc. IRE, vol. 45, pp. 862–872, June 1957.
    • (1957) Proc. IRE , pp. 862-872
    • Fletcher, N.H.1
  • 21
    • 49749204850 scopus 로고
    • P+IN+ silicon diodes at high forward current densities
    • Mar.
    • N. R. Howard and G. W. Johnson, “P+IN+ silicon diodes at high forward current densities,” Solid-State Eelctron., vol. 8, pp. 275–284, Mar. 1965.
    • (1965) Solid-State Eelctron. , vol.8 , pp. 275-284
    • Howard, N.R.1    Johnson, G.W.2
  • 22
    • 0014318424 scopus 로고
    • The forward characteristics of silicon power rectifiers at high current densities
    • A. Herlet, “The forward characteristics of silicon power rectifiers at high current densities,” Solid-State Electron., vol. 11, pp. 717–742, 1968.
    • (1968) Solid-State Electron. , vol.11 , pp. 717-742
    • Herlet, A.1
  • 23
    • 0014848543 scopus 로고
    • Effect of carrier lifetime on the forward characteristics of high-power devices
    • Sept.
    • S. C. Choo, “Effect of carrier lifetime on the forward characteristics of high-power devices,” IEEE Trans. Electron Devices, vol. ED-17, pp. 647–652, Sept. 1970.
    • (1970) IEEE Trans. Electron Devices , vol.ED-17 , pp. 647-652
    • Choo, S.C.1
  • 24
    • 84937999400 scopus 로고
    • Spreading resistance for impurity profiles
    • Stanford Electronics Laboratories, Stanford University, Stanford, CA, Tech. Rep. TR 5013-2, Feb.
    • D.C. D'Avanzo, R. D. Rung, and R. W. Dutton, “Spreading resistance for impurity profiles,” Stanford Electronics Laboratories, Stanford University, Stanford, CA, Tech. Rep. TR 5013-2, Feb. 1977.
    • (1977)
    • D'Avanzo, D.C.1    Rung, R.D.2    Dutton, R.W.3
  • 25
    • 0016114572 scopus 로고
    • Analysis and measurement of carrier lifetimes in the various operating modes of power devices
    • J. Corner, R. Sittig, and W. Zimmermann, “Analysis and measurement of carrier lifetimes in the various operating modes of power devices,” Solid-State Electron., vol. 17, pp. 1099–1106, 1974.
    • (1974) Solid-State Electron. , vol.17 , pp. 1099-1106
    • Corner, J.1    Sittig, R.2    Zimmermann, W.3
  • 26
    • 84937656058 scopus 로고
    • Lifetime control in power rectifiers and thyristors using gold, platinum and electron radiation
    • (Washington, DC)
    • B. J. Baliga and E. Sun, “Lifetime control in power rectifiers and thyristors using gold, platinum and electron radiation,” in IEDM Tech. Dig. (Washington, DC, 1976), pp. 495–498.
    • (1976) IEDM Tech. Dig. , pp. 495-498
    • Baliga, B.J.1    Sun, E.2
  • 27
    • 0004274069 scopus 로고
    • New York: Wiley
    • H. F. Wolf, Semiconductors. New York: Wiley, 1971, p. 324.
    • (1971) Semiconductors , pp. 324
    • Wolf, H.F.1
  • 28
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • Dec.
    • D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE (Lett.), vol. 55, pp. 2192–2193, Dec. 1967.
    • (1967) Proc. IEEE (Lett.) , vol.55 , pp. 2192-2193
    • Caughey, D.M.1    Thomas, R.E.2
  • 29
    • 84938005647 scopus 로고
    • Accurate calculations of the forward drop of power rectifiers and thyristors
    • (Washington, DC)
    • M. S. Adler and V. A. K. Temple, “Accurate calculations of the forward drop of power rectifiers and thyristors,” in IEDM Tech. Dig. (Washington, DC, 1976), pp. 499–503.
    • (1976) IEDM Tech. Dig. , pp. 499-503
    • Adler, M.S.1    Temple, V.A.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.