Analysis and Improvement of Intermodulation Distortion in GaAs Power FET's

IEEE Transactions on Microwave Theory and Techniques

Volumn MTT-28, Issue 1, 1980, Pages 9-17

  Higgins, J A ^a   Kuvås, Reidar L ^b  

^a ROCKWELL SCIENCE CENTER   (United States)

^b Norwegian Council for Scientific and Industrial Research ^*  (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - ION IMPLANTATION; TRANSISTORS, FIELD EFFECT - MICROWAVES;

INTERMODULATION;

EID: 0018924890     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1980.1129999     Document Type: Article

References (8)

1. E. Strid and T. Duder, “Intermodulation distortion behavior of GaAs power FETs,” Dig. Tech. Papers, Int. Microwave Symp., Ottawa, Ont., Canada, p. 135, 1978.
2. F. Sechi and H. Huang, “High efficiency MESFET linear amplifier operating at 4 GHz,” ISSCC Dig. Tech. Papers, p. 164, Feb. 1977.
3. T. Kouno, Y. Arai, and H. Komizo, “Analysis of GaAs third order intermodulation distortion,” IECE Jap., vol. SSD 76–69, 1977.
4. R. E. Williams and D. W. Shaw, “Graded channel FETs: Improved linearity and noise figure,” IEEE Trans. Electron Dev., vol. ED-25, p. 600, 1978.
5. J. A. Higgins, R. L. Kuvas, F. Eisen, and D. R. Ch'en, “Low noise GaAs FETs prepared by ion implantation, IEEE. Trans. Electron Dev., vol. ED-25, p. 600, 1978.
6. R. S. Tucker and C. Rauscher, “Intermodulation distortion properties of GaAs FET,” Electron. Lett., vol. 13, p. 509, 1977.
7. W. Shockley, “A unipolar field effect transistor,” Proc. IRE, vol. 40, pp. 1365–1376, 1952.
8. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field effect transistors,” in Advances Electron and Electron. Physics, vol. 38. New York: Academic Press, 1975, pp. 195–265.