Local crystallography and stress voiding in Al-Si-Cu versus copper interconnects

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 1167-1169

  Keller, R R ^a   Kalnas, C E ^a   Phelps, J M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013444905     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370860     Document Type: Article

References (6)

1. J. A. Nucci, R. R. Keller, J. E. Sanchez, Jr., and Y. Shacham-Diamand, Appl. Phys. Lett. 69, 4017 (1996).
2. R. R. Keller, J. A. Nucci, and D. P. Field, J. Electron. Mater. 26, 996 (1997).
3. K. P. Rodbell, J. L. Hurd, and P. W. DeHaven, Mater. Res. Soc. Symp. Proc. 403, 617 (1996).
4. S. Kordic, R. A. M. Wolters, and K. Z. Troost, J. Appl. Phys. 74, 5391 (1993).
5. S. Kordic, R. A. M. Wolters, R. A. Augur, and A. G. Dirks, Mater. Res. Soc. Symp. Proc. 391, 473 (1995).
6. J. A. Nucci, Y. Shacham-Diamand, and J. E. Sanchez, Jr., Appl. Phys. Lett. 66, 3585 (1995).