Low power pulsed laser annealing of Zn+-implanted InP: First endeavours

Materials Science and Engineering B

Volumn 38, Issue 1-2, 1996, Pages 72-75

  Vitali, G ^a   Rossi, M ^a   Pizzuto, C ^a   Zollo, G ^a   Kalitzova, M ^b  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Indium phosphide; Laser processing; RHEED

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ION IMPLANTATION; IONS; PULSED LASER APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; ZINC;

CRYSTALLINE REORDERING; ENERGY WINDOW; LASER PROCESSING; LOW POWER PULSED LASER ANNEALING; SHEET RESISTIVITY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0011660290     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01376-8     Document Type: Article

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