-
1
-
-
0025414176
-
Chemical Amplification of resist lines (CARL)
-
M. Sebald, R. Sezi, R. Leuschner, H. Ahne, and S.Birkle, "Chemical Amplification of resist lines (CARL)", Microeletr. Eng. 11, pp. 531-534, 1990.
-
(1990)
Microeletr. Eng
, vol.11
, pp. 531-534
-
-
Sebald, M.1
Sezi, R.2
Leuschner, R.3
Ahne, H.4
Birkle, S.5
-
2
-
-
0344507693
-
Benefits and prospects of aqueous silylation for novel dry developable high resolution resists
-
R. Sezi, M. Sebald, R. Leuschner, H. Ahne, S.Birkle, and H. Borndörfer, "Benefits and prospects of aqueous silylation for novel dry developable high resolution resists", Proc. SPIE 1262, pp. 84-93, 1990.
-
(1990)
Proc. SPIE
, vol.1262
, pp. 84-93
-
-
Sezi, R.1
Sebald, M.2
Leuschner, R.3
Ahne, H.4
Birkle, S.5
Borndörfer, H.6
-
3
-
-
0026185778
-
Novel silicon-containing negative resist for bilayer application in electron beam direct writing
-
T. Kure, H. Kawakami, S. Tachi, and H. Enami, "Novel silicon-containing negative resist for bilayer application in electron beam direct writing", Jpn. J. Appl. Phys. 30, 1562, 1991.
-
(1991)
Jpn. J. Appl. Phys
, vol.30
, pp. 1562
-
-
Kure, T.1
Kawakami, H.2
Tachi, S.3
Enami, H.4
-
4
-
-
85075138491
-
Polysiloxanes with a phenol moiety for bilayer photoresist application
-
Y. Onishi, T. Ushirogouchi, R. Horiguchi, and S. Hayase, "Polysiloxanes with a phenol moiety for bilayer photoresist application", Proc. SPIE 1086, pp. 162-172, 1989.
-
(1989)
Proc. SPIE
, vol.1086
, pp. 162-172
-
-
Onishi, Y.1
Ushirogouchi, T.2
Horiguchi, R.3
Hayase, S.4
-
5
-
-
24644461289
-
Development of bilayer resists for deep-ultraviolet and i-line application
-
D. R. McKean, N. J. Clecak, and A. F. Renaldo, "Development of bilayer resists for deep-ultraviolet and i-line application", J. Vac. Sci. Technol. B 9, pp. 3413-3417, 1991.
-
(1991)
J. Vac. Sci. Technol. B
, vol.9
, pp. 3413-3417
-
-
McKean, D.R.1
Clecak, N.J.2
Renaldo, A.F.3
-
6
-
-
0025720312
-
-
R. R. Kunz, P. A. Bianco, M. W. Horn, R. R. Paladugu, D. C. Shaver, D. A. Smith, and C. A. Freed, Proc. SPIE 1466, 218, 1991.
-
(1991)
Proc. SPIE
, vol.1466
, pp. 218
-
-
Kunz, R.R.1
Bianco, P.A.2
Horn, M.W.3
Paladugu, R.R.4
Shaver, D.C.5
Smith, D.A.6
Freed, C.A.7
-
7
-
-
0031173543
-
Optimizing cluster tool throughputs
-
July, pp
-
R. A. Hendrickson, "Optimizing cluster tool throughputs", Solid State Technol., July, pp. 217-222, 1997.
-
(1997)
Solid State Technol
, pp. 217-222
-
-
Hendrickson, R.A.1
-
8
-
-
60849083983
-
Characterization of conditions required to implement submicron processes over topography using dry develop methods
-
A. C. Spencer, J. J. Grunwald, W F. Cordes, W. Moffatt, I. Latchford, T.-P. Ma, and B. Chen, "Characterization of conditions required to implement submicron processes over topography using dry develop methods", Proc. SPIE 920, pp. 295-309, 1988.
-
(1988)
Proc. SPIE
, vol.920
, pp. 295-309
-
-
Spencer, A.C.1
Grunwald, J.J.2
Cordes, W.F.3
Moffatt, W.4
Latchford, I.5
Ma, T.-P.6
Chen, B.7
-
9
-
-
0001633117
-
Dry development of sub-0.25 μm features patterned with 193 nm silylation resist
-
S.C. Palmateer, A. R. Forte, R. R. Kunz, and M. W. Horn, "Dry development of sub-0.25 μm features patterned with 193 nm silylation resist", J. Vac. Sci. Technol. A 14, pp. 1132-1136, 1996.
-
(1996)
J. Vac. Sci. Technol. A
, vol.14
, pp. 1132-1136
-
-
Palmateer, S.C.1
Forte, A.R.2
Kunz, R.R.3
Horn, M.W.4
-
10
-
-
0029409818
-
Plasma development of a silylated bilayer resist: Effects of etch chemistry on critical dimension control and feature profile
-
R. S. Hutton, C. H. Boyce, and G. N. Taylor, "Plasma development of a silylated bilayer resist: effects of etch chemistry on critical dimension control and feature profile", J. Vac. Sci. Technol. B 13, pp. 2366-2371, 1995.
-
(1995)
J. Vac. Sci. Technol. B
, vol.13
, pp. 2366-2371
-
-
Hutton, R.S.1
Boyce, C.H.2
Taylor, G.N.3
-
12
-
-
84868898440
-
0.6 μm CMOS technology using DESIRE process
-
F. Vinet, M. Chevallier, J. C. Guibert, and Ch. Pierrat, "0.6 μm CMOS technology using DESIRE process" Proc. SPIE 1086, pp. 433-442, 1989.
-
(1989)
Proc. SPIE
, vol.1086
, pp. 433-442
-
-
Vinet, F.1
Chevallier, M.2
Guibert, J.C.3
Pierrat, C.4
-
13
-
-
0039817479
-
Defect studies on single and bilayer resist systems
-
K. P. Muller and H. S. Sachdev, "Defect studies on single and bilayer resist systems", J. Vac. Sci. Technol. B 10, pp. 2560-2564, 1992.
-
(1992)
J. Vac. Sci. Technol. B
, vol.10
, pp. 2560-2564
-
-
Muller, K.P.1
Sachdev, H.S.2
-
14
-
-
60849086037
-
-
personal communication
-
M. Sebald, personal communication.
-
-
-
Sebald, M.1
|