Domain structure and stability of MOCVD-derived ferroelectric thin films

Ferroelectrics

Volumn 221, Issue 1-4, 1999, Pages 237-244

  Lin, C H ^a   Yen, B M ^a   Batzer, R S ^a   Chen, Haydn ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Domain; Ferroelectrics; MOCVD; Rhombohedral; Tetragonal

Indexed keywords

EID: 0013128810     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199908016460     Document Type: Article

References (8)

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