Surface smoothing of GaAs microstructure by atomic layer epitaxy

Applied Physics Letters

Volumn 74, Issue 7, 1999, Pages 964-966

  Hirose, S ^a,b   Yoshida, A ^a   Yamaura, M ^a   Munekata, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013115422     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123424     Document Type: Article

References (9)

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9. 2O = 1:1:100) to yield the V-grooved structures along the [110] direction. Finally, the oxide layer was removed by BHF solution. The surface orientation of V grooves is (111)A.