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Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 13-17

Atomic layer epitaxy of AlAs and (AlAs)n(GaAs) n superlattices with a new aluminum source ethyldimethylamine alane

(5) Hirose, S a Kano, N a Hara, K a Munekata, H a Kukimoto, H a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b TOPPAN PRINTING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES; X RAY DIFFRACTION;

ALUMINUM SOURCE; ATOMIC LAYER EPITAXY; ETHYLDIMETHYLAMINE ALANE; RECTANGULAR REACTOR TUBE;

EPITAXIAL GROWTH;

EID: 0031546751 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00743-9 Document Type: Article

Times cited : (11)

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