Optimization of nMOS high-frequency transistor characteristics for application in MMICs

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

Volumn 1998-September, Issue , 1998, Pages 72-76

  Van Meer, H ^a   Kubicek, S ^a   Schreurs, D ^b   Lyu, J ^a   Nauwelaers, B ^b   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

ANALOG APPLICATIONS; DC CHARACTERISTICS; DEVICE FABRICATIONS; HIGH FREQUENCY HF; HIGH-FREQUENCY TRANSISTORS; IMPLANTATION DOSE; SHORT-CHANNEL EFFECT; SOURCE/DRAIN JUNCTIONS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0012888714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.1998.750197     Document Type: Conference Paper

References (5)

1. J.N. Burghartz, D.C. Edelstein, K.A. Jenkiin, Y.H. Kwark, "Spiral inductors and transmission lines in silicon technology using copperdamascene interconnects and low-loss substrates," IEEE Trans. Microwave Theory and Techn., Vol. 45, No. 10, pp. 1961-1968.
2. S.S. Roth, W. Ray, C. Mazure and H.C. Kirsch, "Polysilicon 3, pp. 92-94, 1991.
3. T. Sedgwick, "Rapid thermal processing and the quest for ultra shallow boron junctions," Materials Issues in Silicon Integrated Circuit Processing Symposium.Mater. Res. Soc. Pittsburgh, PA, pp. 403-416, 1986.
4. S. Kubicek, S. Biesemans, Q.F. Wang, K. Maex, K. De Meyer, "Sub 0.1 pm nMOSFETs fabricated using experimental design techniques to optimise performance and minimise process sensitivity," Symposium on VLSI Technology, Digest of Technical Papers, pp. 10.5-106, 199.5.
5. H. Cho and D.E. Burk, "A three-step method for the de-embedding of high-frequency S-parameter measurements," IEEE Trans. on Electron Devices, Vol. 38, No. 6, pp. 1371-137.5.