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Volumn 3, Issue 3, 2001, Pages 735-740
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The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy
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Author keywords
Bi doped; Defects; Ge Se glass; Photoluminescence
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Indexed keywords
BISMUTH;
BISMUTH METALLOGRAPHY;
DEFECTS;
GERMANIUM COMPOUNDS;
GERMANIUM METALLOGRAPHY;
GLASS;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTROSCOPY;
BI-DOPED;
BI-DOPED GLASS;
BISMUTH-DOPED;
DECONVOLUTING;
EXPERIMENTAL SPECTRA;
GE-SE GLASS;
N-TYPE CONDUCTION;
NATIVE DEFECT;
SELENIUM COMPOUNDS;
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EID: 0012839892
PISSN: 14544164
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (11)
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References (18)
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