Photoemission and inverse-photoemission study of the electronic structure of p-and n-type amorphous Ge-Se-Bi films

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 688-691

  Matsuda, Osamu ^a   Ohba, Takashi ^a   Murase, Kazuo ^a   Ono, Izumi ^b   Grekos, Panagiotis ^b   Kouchi, Tsuyoshi ^b   Nakatake, Masashi ^b   Tamura, Masamochi ^b   Namatame, Hirofumi ^b   Hosokawa, Shinya ^b   Taniguchi, Masaki ^b  

^a OSAKA UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BONDING; ELECTRIC CONDUCTIVITY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; FERMI LEVEL; PHOTOEMISSION; SEMICONDUCTING GERMANIUM COMPOUNDS; THIN FILMS;

ANTI BONDING ORBITS; CONDUCTION BAND; INVERSE PHOTOEMISSION SPECTROSCOPY; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VALENCE BAND;

AMORPHOUS FILMS;

EID: 0030563273     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00007-5     Document Type: Article

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