Atomic and electronic structures of glassy GexSe1-x around the stiffness threshold composition

Journal of Optoelectronics and Advanced Materials

Volumn 3, Issue 2, 2001, Pages 199-214

  Hosokawa, S ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Electronic structure; GexSe1 x glass; Stiffness threshold

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; GLASS; PERCOLATION (COMPUTER STORAGE); PERCOLATION (FLUIDS); PHOTOEMISSION; SELENIUM COMPOUNDS; SOLVENTS; STIFFNESS; X RAY SCATTERING;

ANOMALOUS X-RAY SCATTERING; CONCENTRATION DEPENDENCE; DIFFERENTIAL STRUCTURE; INVERSE PHOTOEMISSION; PARTIAL STRUCTURES; PERCOLATION THRESHOLDS; RIGIDITY PERCOLATION THRESHOLDS; ULTRAVIOLET PHOTOEMISSION;

GERMANIUM COMPOUNDS;

EID: 0012832220     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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