Investigations of ultrathin silicon nitride layers produced by low-energy ion implantation and EB-RTA

Nuclear Inst. and Methods in Physics Research, B

Volumn 89, Issue 1-4, 1994, Pages 362-368

  Markwitz, A ^a   Baumann, H ^a   Grill, W ^a   Knop, A ^b   Krimmel, E F ^a   Bethge, K ^a  

^a GOETHE UNIVERSITY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000395601     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(94)95201-9     Document Type: Article

References (24)

1. Characterization of SiN thin films with spectroscopic ellipsometry
2. 13th General Conf. EPS
3. In situ detection of rearrangement processes during electron beam annealing of ion implanted InP
4. Low energy 15N and 14N implantation in chromium analysed by NRA and RBS
5. Depth profiling of light-Z elements with elastic resonances: Oxygen profiling with the 3.045 MeV 16O(α, α)16O resonance
6. Electronic structure of hydrogenated and unhydrogenated amorphous SiN_{x} (0≤x≤1.6): A photoemission study
7. Implantation profiles modified by sputtering