Application of Si/SiGe HBTs in active integrated antennas

2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Volumn , Issue , 2000, Pages 64-66

  Kaleja, M M ^a   Grubl A ^a   Sinnesbichler, F X ^a,c   Olbrich, G R ^a   Strohm, K M ^b   Luy, J F ^b   Biebl, E M ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b DAIMLER AG   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; INTEGRATED CIRCUITS; MICROWAVE ANTENNAS; RECONFIGURABLE HARDWARE; SILICON; SUBSTRATES;

ACTIVE INTEGRATED ANTENNA; FLIP-CHIP TECHNIQUES; HIGH-RESISTIVITY SILICON SUBSTRATE; K BANDS; LARGE SIGNAL MODELING; MICROSTRIP STRUCTURES; SI/SIGE; SIGE HBTS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0012630060     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2000.844299     Document Type: Conference Paper

References (6)

1. Y. Qian, T. Itoh, "Progress in Active Integrated Antennas and Their Applications", IEEE Trans. MTT vol. 46, No. 11, Nov. 1998.
2. E. Kasper, H. Kibbel, H.-J. Herzog, and A. Gruhle, "Growth of 100 GHz SiGe Heterojunction Bipolar Transistor (HBT) Structures," Jpn. J. Appl. Phys., vol. 33, pp. 2415-2418, 1994.
3. A. Gruhle, "SiGe Heterojunction Bipolar Transistors," in J.-F. Luy and P. Russer (Eds.), "Silicon-Based Millimeter-Wave Devices" Berlin: Springer 1994.
4. K.M. Strohm, J.-F. Luy, F. Schäffler, H. Jorke, H. Kibbel, C. Rheinfelder, R. Doerner, J. Gerdes, F.J. Schmückle, and W. Heinrich, "Coplanar Ka-band SiGe-MMIC amplifier," Electron. Letters, vol. 33, no.16, pp. 1353-1354, Aug. 1995.
5. C.C McAndrew et al, "VBIC95, The Vertical Bipolar Inter-Company Model", IEEE Journal of Solid-State Circuits, Vol. 31, No. 10, October 1996.
6. F.X. Sinnesbichler, G.R. Olbrich, VBIC Model Parameters for SiGe HBTs Including Thermal Effects, Self-Heating and 1/f-Noise", Proceedings of the 5th European IC-CAP Meeting, Marseille, France, June 1999.