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1
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33749701068
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Y.-C. Chang, D. Z.-Y. Ting, J. Y. Tang, and K. Hess, Appl. Phys. Lett. 42, 76 (1983).
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(1983)
Appl. Phys. Lett.
, vol.42
, pp. 76
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Chang, Y.-C.1
Ting, D.Z.-Y.2
Tang, J.Y.3
Hess, K.4
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6
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0030536660
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L. Reggiani, H.-J. Fitting, Th. Hingst, J. Köhn, S. Beauvivre, and L. Varani, Phys. Status Solidi B 194, 667 (1996).
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(1996)
Phys. Status Solidi B
, vol.194
, pp. 667
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Reggiani, L.1
Fitting, H.-J.2
Hingst, T.3
Köhn, J.4
Beauvivre, S.5
Varani, L.6
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7
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85037495352
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note
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Throughout the text as here, this distinction between "bare" and "nominal" carrier energies is made for conceptual accuracy, as a practical matter the real self-energy is typically relatively small compared to the bare energy.
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10
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0001834885
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vol. edited by M. Dutta and M. A. Stroscio. series edited by P. K. Tien World Scientific, Singapore
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L. F. Register, in Selected Topics in Electronics and Systems, Vol. 14: Quantum-Based Electronic Devices and Systems, vol. edited by M. Dutta and M. A. Stroscio. series edited by P. K. Tien (World Scientific, Singapore, 1998), pp. 251-279, or L. F. Register, Int. J. High Speed Electron. Syst. 9, 251 (1998).
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(1998)
Selected Topics in Electronics and Systems, Vol. 14: Quantum-based Electronic Devices and Systems
, vol.14
, pp. 251-279
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Register, L.F.1
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11
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0344317453
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L. F. Register, in Selected Topics in Electronics and Systems, Vol. 14: Quantum-Based Electronic Devices and Systems, vol. edited by M. Dutta and M. A. Stroscio. series edited by P. K. Tien (World Scientific, Singapore, 1998), pp. 251-279, or L. F. Register, Int. J. High Speed Electron. Syst. 9, 251 (1998).
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(1998)
Int. J. High Speed Electron. Syst.
, vol.9
, pp. 251
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Register, L.F.1
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12
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85037518205
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note
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While a single carrier is considered for conceptual simplicity in this section, there is nothing in this theoretical discussion that prevents consideration of a multicarrier system coupled to the phonon bath, such as required for consideration of CB effects on impact ionization: simply let the coordinate k represent the multicarrier system, as n represents the multiphonon mode system.
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13
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85037496799
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note
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f may still be zero.
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14
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0009177155
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More generally, the basic SEMC method also can be used for time-dependent calculations, and with potential structures that vary in multiple dimensions. See the preliminary work, L. F. Register and K. Hess, Phys. Rev. B 49, 1900 (1994).
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(1994)
Phys. Rev. B
, vol.49
, pp. 1900
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Register, L.F.1
Hess, K.2
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15
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85037493059
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note
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In Ref. 10, the source term, whether it is a boundary source in real space or a known state, is referred to simply as the "source" while what is called the "intermediate" state here is there referred to as the "initial" state, but this is only a matter of semantics, not physics. 15 The basic SEMC procedure can be repeated sequentially to trace carriers through an unlimited number of scattering "events" - the old intermediate state becomes the new "known" initial state, a new intermediate state is selected stochastically from the old final states, and a new set of final states is generated to replace the complex potential function, each with its own complex potential function, as detailed in Ref. 10 - but this procedure which takes advantage of the lack of accumulating CB is not required for the simulations of this work.
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17
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85037491864
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note
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The use of approximate but analytically tractable distributions - e.g., purely Lorentzian - corrected via self-scattering events allows complicated distribution functions to be both accurately and easily sampled.
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