Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport

Applied Physics Letters

Volumn 71, Issue 9, 1997, Pages 1222-1224

  Register, Leonard F ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001677947     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119857     Document Type: Article

References (11)

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2. J. A. Brum and G. Bastard, Phys. Rev. B 33, 1420 (1986).
3. P. W. M. Blom, C. Smit, J. E. M. Haverkort, and J. H. Wolter, Phys. Rev. B 47, 2072 (1993).
4. M. Grupen, G. Kosinovsky, and K. Hess, in 1993 International Electron Device Meeting Technical Digest (IEEE, Piscataway, NJ, 1993), p. 609.
5. L. F. Register and K. Hess, Phys. Rev. B 49, 1900 (1994).
6. L. F. Register, VLSI Design 5 (unpublished).
7. A manuscript detailing recent improvements in SEMC and containing additional results is in preparation (unpublished).
8. Words such as "initial," "final," and "event" can be misleading but are difficult to avoid in the jargon of scattering. In SEMC, scattering is a continuous process, not a temporally discrete event. Indeed, all of the results presented in this letter were obtained from time-independent (eigenstate) SEMC calculations.
9. M. Grupen, K. Hess, and L. Rota, in Proc. SPIE's OE/LASE Conf., San Jose, CA, Feb. 1995.
10. N. Mori and T. Ando, Phys. Rev. B 40, 6175 (1989).
11. L. F. Register, Phys. Rev. B 45, 89 756 (1992).