Influence of Ar+ ion bombardment on the chemical states of SrBi2Ta2O9 thin films fabricated by metalorganic decomposition

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 3, 2001, Pages 916-921

  Park, Y B ^a   Min, K Y ^a   Cho, K J ^a   Heo, S ^a   Lim, C H ^a   Lee, M K ^a   Lee, T K ^a   Kim, H J ^a   Lee, S Y ^a   Kim, Y W ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; ION BEAMS; ION BOMBARDMENT; MAGNETRON SPUTTERING; PEROVSKITE; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRONTIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

METALORGANIC DECOMPOSITION (MOD);

THIN FILMS;

EID: 0012539723     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1354601     Document Type: Article

References (13)