메뉴 건너뛰기




Volumn 82, Issue 7, 1997, Pages 3478-3481

The temperature dependence of the transient current in ferroelectric Pb(ZrxTi1-x)O3 thin films for memory devices applications

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012041056     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365664     Document Type: Article
Times cited : (8)

References (26)
  • 24
    • 0020918475 scopus 로고
    • Tunneling Discharging of Trapped Holes in Silicon Dioxide
    • edited by J. F. Verweij and D. R. Wolters North-Holland, New York
    • S. Manzini and A. Modelli, "Tunneling Discharging of Trapped Holes in Silicon Dioxide," in Insulating Films in Semiconductors, edited by J. F. Verweij and D. R. Wolters (North-Holland, New York, 1983), p. 112.
    • (1983) Insulating Films in Semiconductors , pp. 112
    • Manzini, S.1    Modelli, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.