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Journal of Crystal Growth

Volumn 217, Issue 4, 2000, Pages 360-365

Segregation of Ga in Ge and InSb in GaSb

(2) Dutta, P S a Ostrogorsky, A G a,b

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b UNIVERSITY OF ALABAMA IN HUNTSVILLE (United States)

Author keywords

Diffusion coefficients; GaInSb; Ge; Segregation; Submerged baffle

Indexed keywords

EID: 0011964402 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00483-8 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.