Control of interstitial density in the preamorphized Si by carbon implantation

Conference on Solid State Devices and Materials

Volumn , Issue , 1992, Pages 26-28

  Nishikawa, Satoshi ^a   Yamaji, Tetsuo ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CARBON; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS;

INTERSTITIAL DENSITY; JUNCTION LEAKAGE CURRENTS;

SEMICONDUCTING SILICON;

EID: 0026980953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1992.a-1-5     Document Type: Conference Paper

References (6)