Spin transition of a two-dimensional hole system in the fractional quantum hall effect

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 4, 1999, Pages R2502-R2505

  Muraki, K ^a   Hirayama, Y ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011742849     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.R2502     Document Type: Article

References (30)

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10. Since the lowest (Formula presented) for each S is given by (Formula presented) the (Formula presented) term makes larger S energetically favorable.
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18. (Formula presented) can be calculated as (Formula presented) where (Formula presented) is the front-gate bias for the symmetric potential.
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20. The term “effective g factor” must be used with care, for it is not a well-defined material constant, and can depend on the well width, carrier density, field direction, etc.
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23. For simplicity, the calculations were done for a (001) heterostructure.
24. Setting (Formula presented) -1, and 0 in (Formula presented) results in negative indices for some of the harmonic-oscillator functions, whose coefficients are then automatically set to zero. Accordingly, those states with (Formula presented) have only (Formula presented)
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27. The relative weight of the four (Formula presented)’s in the first LL at (Formula presented) T was calculated to be (Formula presented) and (0.028,0.134,0.081,0.757) for the symmetric and asymmetric potentials, respectively.
28. Here, (Formula presented) was evaluated by setting (Formula presented) (Formula presented) for (Formula presented) V, as expected from the 50-nm spacer thickness.
29. For the largest (Formula presented) peculiar behavior occurs at (Formula presented) T, probably because the low-density hole gas in the “lead” regions, being depleted by the large back-gate bias, becomes highly resistive at large fields.
30. Since the depletion charge (Formula presented) decreases the holes as (Formula presented) in SH’s, (Formula presented) is given by (Formula presented)