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Volumn 10, Issue 13, 1998, Pages 2845-2859

Further aspects of damage-induced junction mechanisms and the role of phosphorus movement in double-layer in-chamber annealed In-Sn/ITO/InP solar cells

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[No Author keywords available]

Indexed keywords


EID: 0011715606     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/13/004     Document Type: Article
Times cited : (1)

References (26)
  • 3
    • 0042868994 scopus 로고
    • Indium phosphide based solar cells: A critical review of their fabrication, performance and operation
    • (New York: Academic) ch 2
    • Coutts T J and Yamaguchi M 1988 Indium phosphide based solar cells: a critical review of their fabrication, performance and operation Current Topics in Photovoltaics vol 3 (New York: Academic) ch 2
    • (1988) Current Topics in Photovoltaics , vol.3
    • Coutts, T.J.1    Yamaguchi, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.