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Volumn 83, Issue 3, 1997, Pages 317-324

Effects of oxidized layers on built-in potentials in ITO/InP solar cells

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EID: 11544301744     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072197135391     Document Type: Article
Times cited : (2)

References (18)
  • 3
    • 0021757237 scopus 로고
    • Development of InP based solar cells with indium tin oxide films prepared by reactive dc sputtering
    • Chaudhuri, s., and Pal, A. K., 1984, Development of InP based solar cells with indium tin oxide films prepared by reactive dc sputtering. Thin Solid Films, 119, 1-4.
    • (1984) Thin Solid Films , vol.119 , pp. 1-4
    • Chaudhuri, S.1    Pal, A.K.2
  • 4
    • 0028763950 scopus 로고
    • Electrical behaviour of low-power RF magnetron-sputtered indium tin oxide films on silicon substrates
    • Chiou, B. S., Hseih, S.T, and Wu, W. F., 1994, Electrical behaviour of low-power RF magnetron-sputtered indium tin oxide films on silicon substrates. Applied Surface Science, 74, 297-302.
    • (1994) Applied Surface Science , vol.74 , pp. 297-302
    • Chiou, B.S.1    Hseih, S.T.2    Wu, W.F.3
  • 9
    • 11744261332 scopus 로고
    • Study of surface damage in ITO/InP solar cells
    • Dhere, N. G., Li, X., Coutts, T J., and Parikh, N. R., 1988, Study of surface damage in ITO/InP solar cells. Vacuum, 38, 753-755.
    • (1988) Vacuum , vol.38 , pp. 753-755
    • Dhere, N.G.1    Li, X.2    Coutts, T.J.3    Parikh, N.R.4
  • 10
    • 84955038040 scopus 로고
    • Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide
    • Gessert, T A., Li, X., Wanlass, M. W, Nelson, A. J., and Coutts, T J., 1990, Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide. Journal of Vacuum Science and Technology, A8, 1912-1916.
    • (1990) Journal of Vacuum Science and Technology , vol.A8 , pp. 1912-1916
    • Gessert, T.A.1    Li, X.2    Wanlass, M.W.3    Nelson, A.J.4    Coutts, T.J.5
  • 11
    • 0028448160 scopus 로고
    • Indium phosphide surface processing-an FTIR analysis
    • Henry, J., and Livingstone, J., 1994, Indium phosphide surface processing-an FTIR analysis. Applied Surface Science, 78, 159-163.
    • (1994) Applied Surface Science , vol.78 , pp. 159-163
    • Henry, J.1    Livingstone, J.2
  • 12
    • 0010959640 scopus 로고
    • Surface degradation of InP during contact formation-an FTIR analysis
    • Henry, J., and Livingstone, J., 1995a, Surface degradation of InP during contact formation-an FTIR analysis. Infrared Physics and Technology, 36, 655-659.
    • (1995) Infrared Physics and Technology , vol.36 , pp. 655-659
    • Henry, J.1    Livingstone, J.2
  • 13
    • 0029273906 scopus 로고
    • Improved solar cells using double layers and hydrogen-rich fabrication ambients
    • Henry, J., and Livingstone, J., 1995b, Improved solar cells using double layers and hydrogen-rich fabrication ambients. Physica Status Solidi, 148, 51-53.
    • (1995) Physica Status Solidi , vol.148 , pp. 51-53
    • Henry, J.1    Livingstone, J.2
  • 14
    • 0030194273 scopus 로고    scopus 로고
    • Improved double layer ITO/InP solar cells using annealing techniques
    • Henry, J., and Livingstone, J., 1996, Improved double layer ITO/InP solar cells using annealing techniques. Physica Status Solidi, 156, 9-12.
    • (1996) Physica Status Solidi , vol.156 , pp. 9-12
    • Henry, J.1    Livingstone, J.2
  • 15
    • 51249168684 scopus 로고
    • The influence of indium tin oxide deposition on the transport properties at InP junctions
    • Luo, J. K., and Thomas, H., 1993, The influence of indium tin oxide deposition on the transport properties at InP junctions. Journal of Electronic Materials, 22, 1311-1316.
    • (1993) Journal of Electronic Materials , vol.22 , pp. 1311-1316
    • Luo, J.K.1    Thomas, H.2
  • 17
    • 0019011017 scopus 로고
    • Sputtered oxide/indium phosphide junctions and indium phosphide surfaces
    • Tsai, M.-J., Fahrenbruch, A. L., and Bube, R. H., 1980, Sputtered oxide/indium phosphide junctions and indium phosphide surfaces. Journal of Applied Physics, 51, 2696-2705.
    • (1980) Journal of Applied Physics , vol.51 , pp. 2696-2705
    • Tsai, M.-J.1    Fahrenbruch, A.L.2    Bube, R.H.3
  • 18
    • 0004766814 scopus 로고
    • Transport properties of spraypyrolytic-grown indium tin oxide/indium phosphide junctions
    • VAsu, V, Manivannan, P., and Subramanyam, A., 1995, Transport properties of spray pyrolytic-grown indium tin oxide/indium phosphide junctions. Journal of Applied Physics, 77, 5220-5224.
    • (1995) Journal of Applied , vol.77 , pp. 5220-5224
    • Vasu, V.1    Manivannan, P.2    Subramanyam, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.