Donor level in a quasi-two dimensional heterojunction system

Solid State Communications

Volumn 109, Issue 2, 1998, Pages 93-98

  Ban, S L ^a,b   Hasbun, J E ^a  

^a UNIVERSITY OF WEST GEORGIA   (United States)

^b INNER MONGOLIA UNIVERSITY   (China)

Author keywords

A. Heterojunctions; A. Semiconductors; D. Electronic states

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; ELECTRONIC DENSITY OF STATES; GROUND STATE; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; VARIATIONAL TECHNIQUES;

ALUMINUM GALLIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0032308658     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00525-0     Document Type: Article

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