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Volumn 74, Issue 4, 1999, Pages 576-578

Electrically active defect centers induced by Ga+ focused ion beam irradiation of GaAs(100)

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[No Author keywords available]

Indexed keywords


EID: 0011545777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123150     Document Type: Article
Times cited : (9)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.