Effect of lattice strain on exciton energy of AgGaS2 epitaxial layers on GaAs (100)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1898-1904

  Kurasawa, Masaki ^a   Tsuboi, Nozomu ^a   Kobayashi, Satoshi ^a   Kaneko, Futao ^a  

^a NIIGATA UNIVERSITY   (Japan)

Author keywords

AgGaS2; Chalcopyrite compound; Epitaxial growth; Exciton energy; Lattice strain; Nonlinear optical material; p d hybridization; Photoluminescence; Raman scattering; Reflectance

Indexed keywords

EID: 0011508113     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1898     Document Type: Article

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