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Volumn 84, Issue 9, 1998, Pages 4929-4934

Carbon and group II acceptor coimplantation in GaAs

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0011210441     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368737     Document Type: Article
Times cited : (6)

References (31)
  • 16
    • 3042893097 scopus 로고
    • Although in some cases Be diffusion is directly proportional to the concentration of holes. For an example see: H. G. Robinson, M. D. Deal, and D. A. Stevenson, Appl. Phys. Lett. 58, 2800 (1991).
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 2800
    • Robinson, H.G.1    Deal, M.D.2    Stevenson, D.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.