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Volumn 68, Issue 20, 1996, Pages 2873-2875

Enhanced hydrogenation in polycrystalline silicon thin films using low-temperature ultrasound treatment

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0010630816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116353     Document Type: Article
Times cited : (20)

References (13)
  • 10
    • 21544434423 scopus 로고    scopus 로고
    • G. Nowak and J. Lagowski (unpublished).
    • G. Nowak and J. Lagowski (unpublished).
  • 13
    • 0029538664 scopus 로고    scopus 로고
    • S. Ostapenko, W. Henley, S. Karimpannakkel, L. Jastrzebski, and J. Lagowski, Defects and Impurity Engineered Semiconductors and Devices, edited by S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, and B. L. Sopori (MRS Proceedins, Pittsburgh, PA, 1995), Vol. 378, p. 405.
    • S. Ostapenko, W. Henley, S. Karimpannakkel, L. Jastrzebski, and J. Lagowski, Defects and Impurity Engineered Semiconductors and Devices, edited by S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, and B. L. Sopori (MRS Proceedins, Pittsburgh, PA, 1995), Vol. 378, p. 405.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.